Seiko Technology established the silicon carbide wafer grinding mass production technology
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This technology uses technology disclosed by the Industrial Technology Research Institute (Industrial Research Institute). It is characterized by the use of a grinding process that does not apply excess pressure to the silicon carbide crystals, which reduces processing distortion and improves wafer surface accuracy. The surface roughness is 0.1 nm, which is less than the Ra value (0.3 nm) required for epitaxial film growth. Moreover, it is expected to become a much-anticipated next-generation semiconductor substrate - silicon carbide wafer by shortening the polishing time and improving mass production efficiency. Practical technology. In addition to silicon carbide, it can also be used in the processing of the rapidly expanding white LED substrate material sapphire, gallium nitride (GaN), zinc oxide (ZnO) crystals.
The sample supply has been started in July 2007. In the future, the company plans to improve its small-scale production system and build a mass production system in its own factory (Matsui City, Chiba Prefecture).
Compared with silicon (Si), the mainstream of semiconductor backplane materials, silicon carbide has the advantages of high voltage resistance, high temperature resistance, and low power loss. It is expected to be applied to power equipment, communication systems, and power supply units of power plants such as power generation and transmission. Devices such as electric trains and automobile drives that require high voltage and high current are required. However, since the hardness of silicon carbide is high and it is difficult to perform grinding processing, mass production technology has been a big problem in the past.